Digital.CSIC. Repositorio Institucional del CSIC

oai:digital.csic.es:10261/332149

5 pages. -- ESI-Figure 1: XRD pattern of L2NO4 thin films with different thickness deposited at 650 °C on a) LAO, b) STO and c) YSZ. Substrate peaks are marked by grey dots and the observed L2NO4 planes are labelled according to ICDD reference 04-015-2147. -- ESI-Figure 2: c-parameter as a function of thickness for ”as-deposited“ L2NO4 films on LAO and STO single crystal substrates. -- ESI-Figure 3: Grain size distribution, i.e. number of grains for each grain size, for all L2NO4 film thicknesses and substrates, analysed within an area of 1.13×0.76 µm. -- ESI-Figure 4: SEM analysis of 200 nm thick L2NO4 film deposited at 750 °C on a) LAO and b) YSZ substrate. -- ESI-Figure 5: Atomic force microscopy of L2NO4/LAO samples, revealing increasing roughness (RMS) from 2.6 to 11.9 nm with increasing film thickness from 33 to 540 nm. -- ESI-Figure 6: STEM EDX analysis of 540 nm thick L2NO4/LAO sample. -- ESI-Figure 7: Analysis of microstructural stability of L2NO4 by SEM and XRD after functional characterisation at temperatures up to 600 °C with a total annealing duration of 24h. -- ESI-Figure 8: Normalised conductivity transients of L2NO4 thin films at 375°C after a change of pO2 from 10-250 mbar. -- ESI-Figure 9: a) Electrochemical impedance spectroscopy of nano-columnar L2NO4/YSZ measured in dry air in the frequency range from 1 MHz to 1 Hz at 590 °C. The equivalent circuit, used to fit the EI spectra, is shown in the inset, with a resistive contribution for YSZ in series to a high and low frequency Randles cell for the counter and the L2NO4 working electrode, respectively. b) L2NO4 contribution over the reciprocal temperature for 100 and 200 nm thick L2NO4., Peer reviewed