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Supplementary Information: Reducing charge noise in quantum dots by using thin silicon quantum wells

Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338
Digital.CSIC. Repositorio Institucional del CSIC
  • Paquelet Wuetz, Brian
  • Degli Esposti, Davide
  • Zwerver, Anne-Marije J.
  • Amitonov, Sergey V.
  • Botifoll, Marc
  • Arbiol, Jordi
  • Sammak, Amir
  • Vandersypen, Lieven M. K.
  • Russ, Maximilian
  • Scappucci, Giordano
10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- References, Peer reviewed
 
DOI: http://hdl.handle.net/10261/337338
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338

HANDLE: http://hdl.handle.net/10261/337338
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338
 
Ver en: http://hdl.handle.net/10261/337338
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338
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Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338
Set de datos (Dataset). 2023

SUPPLEMENTARY INFORMATION: REDUCING CHARGE NOISE IN QUANTUM DOTS BY USING THIN SILICON QUANTUM WELLS

Digital.CSIC. Repositorio Institucional del CSIC
  • Paquelet Wuetz, Brian
  • Degli Esposti, Davide
  • Zwerver, Anne-Marije J.
  • Amitonov, Sergey V.
  • Botifoll, Marc
  • Arbiol, Jordi
  • Sammak, Amir
  • Vandersypen, Lieven M. K.
  • Russ, Maximilian
  • Scappucci, Giordano
10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- References, Peer reviewed

HANDLE: http://hdl.handle.net/10261/337338


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Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/337338
Set de datos (Dataset). 2023

SUPPLEMENTARY INFORMATION: REDUCING CHARGE NOISE IN QUANTUM DOTS BY USING THIN SILICON QUANTUM WELLS

Digital.CSIC. Repositorio Institucional del CSIC
  • Paquelet Wuetz, Brian
  • Degli Esposti, Davide
  • Zwerver, Anne-Marije J.
  • Amitonov, Sergey V.
  • Botifoll, Marc
  • Arbiol, Jordi
  • Sammak, Amir
  • Vandersypen, Lieven M. K.
  • Russ, Maximilian
  • Scappucci, Giordano
10 pages. -- Contents: Measurement of the thickness of the quantum wells. -- Charge noise measurements. -- Noise spectra for a quantum dot from heterostructure C 5. -- Frequency and gate voltage dependence of noise spectra. -- Operation gate voltages for charge sensor quantum dots. -- 6. Lever arm extraction. -- 7. Simulations of dephasing times and gate fidelities. -- Dephasing of charge qubit. -- Dephasing of spin qubit. -- Gate fidelity simulations. -- References, Peer reviewed

HANDLE: http://hdl.handle.net/10261/337338


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