Digital.CSIC. Repositorio Institucional del CSIC

oai:digital.csic.es:10261/344132

Figure S1: Infrared spectra in KBr of Syl-SC compound; Figure S2: (a) 1H NMR spectrum of Syl-SC (300 MHz, CD3COCD3), (b) 13C NMR spectrum of Syl-SC (75 MHz, CD3COCD3); Figure S3: (a) Thermogravimetric analysis (TGA) curve of Syl-SC; method 30–900 °C to 10 °C/min under 80.0 mL/min of N2. (b) Differential scanning calorimetry (DSC) trace of Syl-SC measured under N2 flow at heating and cooling of 10 °C/min from 30 to 300 °C; Table S1: Thermal properties of HTM; Figure S4: (a) UV-vis of Syl-SC in CH2Cl2 solution. (b) Tangent to the UV-vis absorption curve on the side of lower energy to estimate the transition energy (Eg) from the transition wavelength (λtrans). (c) Differential pulse voltammetry (DPV) and (d) cyclic voltammetry in CH2Cl2 solution for Syl-SC vs. Ag/AgCl; Table S2: Optical and electrochemical properties of Syl-SC; Figure S5: Devices based on PEDOT:PSS and Syl-SC at different concentrations. (a) Performance device (PCE) boxplot; (b) open circuit voltages (Voc) boxplot; (c) current density (Jsc) boxplot; and (d) fill factor (FF) boxplot; Figure S6: The contact angles between HTL film and water droplet on the substrate of (a) PEDOT:PSS and (b) Syl-SC. Top surface FESEM of (c) PEDOT:PSS and (d) Syl-SC; Figure S7: Cross-sectional FESEM image of the p-i-n device containing Syl-SC as HTM with the thickness of the layer’s components; Table S3: Impedance parameters extracted from Nyquist plots fitted with the electrical equivalent circuit; Figure S8: Charge carrier lifetime (𝜏∆𝑛 ) as a function of device Voc. References [56,58,77,78] are cited in the Supplementary Materials., Peer reviewed