Dataset.

Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires [Dataset]

Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/331810
Digital.CSIC. Repositorio Institucional del CSIC
  • Luo, Lu
  • Assali, Simone
  • Atalla, Mahmoud R. M.
  • Koelling, Sebastian
  • Attiaoui, Anis
  • Daligou, Gérard
  • Martí-Sànchez, Sara
  • Arbiol, Jordi
  • Moutanabbir, Oussama
7 pages. -- PDF file includes: S1. AC HAADF STEM images of Ge/Ge0.92Sn0.08 core/shell NWs. -- S2. Estimate the gate capacitance of NW field-effect transistor. -- S3. Electrical characteristics of single Ge field-effect transistor. -- S4. Optical characteristics of single Ge/Ge0.92Sn0.08 core/shell NW detector. -- S5. FDTD simulation, Group IV Ge1–xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable band gap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core/shell nanowire heterostructures to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously relatively high mobility, high ON/OFF ratio, and high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced band gap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 μm, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1–xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale-integrated infrared photonics., Peer reviewed
 
DOI: http://hdl.handle.net/10261/331810
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/331810

HANDLE: http://hdl.handle.net/10261/331810
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/331810
 
Ver en: http://hdl.handle.net/10261/331810
Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/331810

Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/278922
Artículo científico (article). 2022

EXTENDED-SWIR PHOTODETECTION IN ALL-GROUP IV CORE/SHELL NANOWIRES

Digital.CSIC. Repositorio Institucional del CSIC
  • Luo, Lu
  • Assali, Simone
  • Atalla, Mahmoud R. M.
  • Koelling, Sebastian
  • Attiaoui, Anis
  • Daligou, Gérard
  • Martí-Sànchez, Sara
  • Arbiol, Jordi
  • Moutanabbir, Oussama
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable band gap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core/shell nanowire heterostructures to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously relatively high mobility, high ON/OFF ratio, and high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced band gap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 μm, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1-xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale-integrated infrared photonics., O.M. acknowledges support from NSERC Canada (Discovery, SPG, and CRD Grants), Canada Research Chairs, Canada Foundation for Innovation, Mitacs, PRIMA Québec, and Defence Canada (Innovation for Defence Excellence and Security, IDEaS). L.L acknowledges support from the China Scholarship Council (CSC). S.A. acknowledges support from Fonds de recherche du Québec-Nature et technologies (FRQNT, PBEEE scholarship). ICN2 acknowledges funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa program from Spanish MINECO (grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. S.M. and J.A. acknowledge the use of instrumentation as well as the technical advice provided by the National Facility ELECMI ICTS, node “Laboratorio de Microscopías Avanzadas” at the University of Zaragoza. S.M. and J.A. also acknowledge support from the CSIC Research Platform on Quantum Technologies PTI-001.




Digital.CSIC. Repositorio Institucional del CSIC
oai:digital.csic.es:10261/331810
Dataset. 2022

EXTENDED-SWIR PHOTODETECTION IN ALL-GROUP IV CORE/SHELL NANOWIRES [DATASET]

Digital.CSIC. Repositorio Institucional del CSIC
  • Luo, Lu
  • Assali, Simone
  • Atalla, Mahmoud R. M.
  • Koelling, Sebastian
  • Attiaoui, Anis
  • Daligou, Gérard
  • Martí-Sànchez, Sara
  • Arbiol, Jordi
  • Moutanabbir, Oussama
7 pages. -- PDF file includes: S1. AC HAADF STEM images of Ge/Ge0.92Sn0.08 core/shell NWs. -- S2. Estimate the gate capacitance of NW field-effect transistor. -- S3. Electrical characteristics of single Ge field-effect transistor. -- S4. Optical characteristics of single Ge/Ge0.92Sn0.08 core/shell NW detector. -- S5. FDTD simulation, Group IV Ge1–xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable band gap energy and directness. Herein, we exploit these attributes along with the enhanced lattice strain relaxation in Ge/Ge0.92Sn0.08 core/shell nanowire heterostructures to implement highly responsive room-temperature short-wave infrared nanoscale photodetectors. Atomic-level studies confirm the uniform shell composition and its higher crystallinity with respect to thin films counterparts. The demonstrated Ge/Ge0.92Sn0.08 p-type field-effect nanowire transistors exhibit superior optoelectronic properties achieving simultaneously relatively high mobility, high ON/OFF ratio, and high responsivity, in addition to a broadband absorption in the short-wave infrared range. Indeed, the reduced band gap of the Ge0.92Sn0.08 shell yields an extended cutoff wavelength of 2.1 μm, with a room-temperature responsivity reaching 2.7 A/W at 1550 nm. These results highlight the potential of Ge/Ge1–xSnx core/shell nanowires as silicon-compatible building blocks for nanoscale-integrated infrared photonics., Peer reviewed




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