SENSOR INTEGRADO PARA ESPECTROSCOPIA DE BIOIMPEDANCIA DE BANDA ANCHA CON MULTIFRECUENCIA SIMULTANEA
RTI2018-095994-B-I00
•
Nombre agencia financiadora Agencia Estatal de Investigación
Acrónimo agencia financiadora AEI
Programa Programa Estatal de I+D+i Orientada a los Retos de la Sociedad
Subprograma Programa Estatal de I+D+i Orientada a los Retos de la Sociedad
Convocatoria Retos Investigación: Proyectos I+D+i
Año convocatoria 2018
Unidad de gestión Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020
Centro beneficiario UNIVERSIDAD DE EXTREMADURA
Identificador persistente http://dx.doi.org/10.13039/501100011033
Publicaciones
Resultados totales (Incluyendo duplicados): 2
Encontrada(s) 1 página(s)
Encontrada(s) 1 página(s)
Low-voltage CMOS bulk-driven buffer with bootstrapping technique for gain enhancement and THD-noise reduction
Academica-e. Repositorio Institucional de la Universidad Pública de Navarra
- Cruz Blas, Carlos Aristóteles de la
- Carrillo, Juan M.
In this paper, a bootstrapping technique is applied to a bulk-driven voltage buffer for canceling the gate-source transconductance in order to improve the cell gain, the linearity and reduce the input-referred noise. The bootstrapped circuitry is conveniently implemented by only using a capacitor and a pseudo resistor. The suitability of the technique is demonstrated by simulation results using a flipped voltage follower, even though it is general and can be applied to other structures. A 1-V buffer is designed in 0.18 µm CMOS technology, showing a 4.3 times improvement in the voltage gain (conventional 0.21 V/V, bootstrapped 0.90 V/V), increasing 5 times the input voltage range for a 1% THD (conventional 50 mV, bootstrapped 250 mV) and reducing the input equivalent noise around a 16% (conventional 180 nV/-√Hz, bootstrapped 155 nV/√Hz at 10 kHz)., This work has been funded by projects RTI2018-095994-B-I00 and PID2019-107258RB-C32 from MCIN/AEI/10.13039/501100011033, and by Fondo Europeo de Desarrollo Regional (FEDER).
0.6-V 1.65-uW second-order Gm-C bandpass filter for multi-frequency bioimpedance analysis based on a bootstrapped bulk-driven voltage buffer
Academica-e. Repositorio Institucional de la Universidad Pública de Navarra
- Carrillo, Juan M.
- Cruz Blas, Carlos Aristóteles de la
A bootstrapping technique used to increase the intrinsic voltage gain of a bulk-driven
MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff
transistor to be connected to the gate terminal of a bulk-driven MOS device, thus achieving a quasi-
floating-gate structure. As a result, the contribution of the gate transconductance is cancelled out and
the voltage gain of the device is correspondingly increased. The technique allows for implementing a
voltage follower with a voltage gain much closer to unity as compared to the conventional bulk-driven
case. This voltage buffer, along with a pseudo-resistor, is used to design a linearized transconduc-
tor. The proposed transconductance cell includes an economic continuous tuning mechanism that
permits programming the effective transconductance in a range sufficiently wide to counteract the
typical variations that process parameters suffer during fabrication. The transconductor has been
used to implement a second-order Gm-C bandpass filter with a relatively high selectivity factor,
suited for multi-frequency bioimpedance analysis in a very low-voltage environment. All the circuits
have been designed in 180 nm CMOS technology to operate with a 0.6-V single-supply voltage.
Simulated results show that the proposed technique allows for increasing the linearity and reduc-
ing the input-referred noise of the bootstrapped bulk-driven MOS transistor, which results in an
improvement of the overall performance of the transconductor. The center frequency of the bandpass
filter designed can be programmed in the frequency range from 6.5 kHz to 37.5 kHz with a power
consumption ranging between 1.34 μW and 2.19 μW. The circuit presents an in-band integrated noise
of 190.5 μVrms and is able to process signals of 110 mVpp with a THD below −40 dB, thus leading to
a dynamic range of 47.4 dB, Work funded by projects RTI2018-095994-B-I00, from MCIN/AEI/10.13039/501100011033, and IB18079, from Junta de Extremadura R&D Plan, and by Fondo Europeo de Desarrollo Regional (FEDER) Una manera de hacer Europa.
MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff
transistor to be connected to the gate terminal of a bulk-driven MOS device, thus achieving a quasi-
floating-gate structure. As a result, the contribution of the gate transconductance is cancelled out and
the voltage gain of the device is correspondingly increased. The technique allows for implementing a
voltage follower with a voltage gain much closer to unity as compared to the conventional bulk-driven
case. This voltage buffer, along with a pseudo-resistor, is used to design a linearized transconduc-
tor. The proposed transconductance cell includes an economic continuous tuning mechanism that
permits programming the effective transconductance in a range sufficiently wide to counteract the
typical variations that process parameters suffer during fabrication. The transconductor has been
used to implement a second-order Gm-C bandpass filter with a relatively high selectivity factor,
suited for multi-frequency bioimpedance analysis in a very low-voltage environment. All the circuits
have been designed in 180 nm CMOS technology to operate with a 0.6-V single-supply voltage.
Simulated results show that the proposed technique allows for increasing the linearity and reduc-
ing the input-referred noise of the bootstrapped bulk-driven MOS transistor, which results in an
improvement of the overall performance of the transconductor. The center frequency of the bandpass
filter designed can be programmed in the frequency range from 6.5 kHz to 37.5 kHz with a power
consumption ranging between 1.34 μW and 2.19 μW. The circuit presents an in-band integrated noise
of 190.5 μVrms and is able to process signals of 110 mVpp with a THD below −40 dB, thus leading to
a dynamic range of 47.4 dB, Work funded by projects RTI2018-095994-B-I00, from MCIN/AEI/10.13039/501100011033, and IB18079, from Junta de Extremadura R&D Plan, and by Fondo Europeo de Desarrollo Regional (FEDER) Una manera de hacer Europa.